protection products 1 www.semtech.com preliminary protection products - railclamp ? ? ? ? ? RCLAMP1255P low capacitance rclamp ? surge protection for uusb interfaces description features circuit diagram pin configuration (top view) revision 06/18/2013 applications mechanical characteristics ? slp2018p6 6l package ? pb-free, halogen free, rohs/weee compliant ? nominal dimensions: 2.0 x 1.8 x 0.57 mm ? lead finish: nipdau ? molding compound flammability rating: ul 94v-0 ? marking : marking code + date code ? packaging : tape and reel vbus d+ d- id gnd gnd gnd gnd railclamp ? tvs arrays are low capacitance esd protection devices designed to protect high speed data interfaces. the rclamp ? 1255p provides dedicated surge and esd protection for uusb ports. it is de- signed to replace multiple discrete components in portable applications. this device features low capaci- tance tvs diodes for protection of the usb data (dp, dm) and usb id pins operating up to +/- 4 volts. these diodes provide esd protection to 10kv contact discharge per iec 61000-4-2. loading capacitance on these lines is <0.50pf. an integrated 12 volt tvs diode is used for protection of the usb voltage bus. the vbus tvs is designed with a high surge current capability of 100a (tp=8/20us) and low clamping voltage. the RCLAMP1255P is in a 6-pin slp2018p6 package. it measures 2.0 x 1.8mm with a nominal height of 0.57mm. this highly integrated device requires less board space than existing solutions. the combination of small size, low capacitance, and high level of surge and esd protection makes this device a flexible solution for protection of usb interfaces in mo- bile phones, laptops, and other portable electonics. ? esd and surge protection for usb voltage bus to iec 61000-4-2 (esd) 30kv (air), 30kv (contact) iec 61000-4-5 (lightning) 100a (8/20 s) iec 61000-4-4 (eft) 40a (5/50ns) ? esd protection for usb data lines to iec 61000-4-2 (esd) 15kv (air), 10kv (contact) ? protects usb dp, dm, and id pins operating up to +/- 4v ? protects usb vbus operating up to 12v ? low capacitance (<0.50pf) on dp, dm, and id pins ? low clamping voltage ? low dynamic resistance on dp, dm, and id pins ? solid-state silicon-avalanche technology ? usb 2.0 ? usb otg ? uusb 23 4 5, 6, 12v 1 tabs 4v
2 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P absolute maximum rating electrical characteristics (t=25 o c) g n i t a rl o b m y se u l a vs t i n u s v t d i b s u , m d , p ds v t d i b s u , m d , p d s v t d i b s u , m d , p d s v t d i b s u , m d , p ds v t d i b s u , m d , p d ) s 0 2 / 8 = p t ( r e w o p e s l u p k a e pp k p 0 4s t t a w ) s 0 2 / 8 = p t ( t n e r r u c e s l u p k a e pi p p 3a ) r i a ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e ) t c a t n o c ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e v d s e 5 1 0 1 v k e r u t a r e p m e t g n i t a r e p ot j 5 2 1 + o t 5 5 -c e r u t a r e p m e t e g a r o t st g t s 0 5 1 + o t 5 5 -c s v t s u b vs v t s u b v s v t s u b v s v t s u b vs v t s u b v ) s 0 2 / 8 = p t ( r e w o p e s l u p k a e pp k p 0 0 5 2s t t a w ) s 0 2 / 8 = p t ( t n e r r u c e s l u p k a e pi p p 0 0 1a ) r i a ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e ) t c a t n o c ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e v d s e 0 3 0 3 v k e r u t a r e p m e t g n i t a r e p ot j 5 2 1 + o t 5 5 -c e r u t a r e p m e t e g a r o t st g t s 0 5 1 + o t 5 5 -c ) 1 n i p ( s v t s u b v) 1 n i p ( s v t s u b v ) 1 n i p ( s v t s u b v ) 1 n i p ( s v t s u b v) 1 n i p ( s v t s u b v r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r d n g o t 1 n i p2 1v e g a t l o v n w o d k a e r b e s r e v e rv r b i t , a m 1 = d n g o t 1 n i p 5 . 3 15 . 4 15 . 6 1v t n e r r u c e g a k a e l e s r e v e ri r v m w r v 2 1 = d n g o t 1 n i p 0 0 3 . 0a e g a t l o v d r a w r o fv f i f a m 0 1 = 1 n i p o t d n g 6 . 07 . 00 . 1v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 0 3 = d n u o r g o t 1 n i p 5 . 5 18 1v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 0 0 1 = d n u o r g o t 1 n i p 5 . 8 15 2v e c n a t i c a p a c n o i t c n u jc j v r z h m 1 = f , v 0 = d n g o t 1 n i p 0 5 9 10 0 5 2f p
3 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P ) 4 , 3 , 2 s n i p ( d i b s u , p d , m d) 4 , 3 , 2 s n i p ( d i b s u , p d , m d ) 4 , 3 , 2 s n i p ( d i b s u , p d , m d ) 4 , 3 , 2 s n i p ( d i b s u , p d , m d) 4 , 3 , 2 s n i p ( d i b s u , p d , m d r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r n i pd n g o t 4 , 3 , 24v e g a t l o v n w o d k a e r b e s r e v e rv r b , a m 1 = t i n i p4 , 3 , 2d n g o t 5 . 47 . 53 . 6v t n e r r u c e g a k a e l e s r e v e ri r v m w r , v 0 . 2 = n i p4 , 3 , 2d n g o t 5 0 0 . 0 <0 2 0 . 0a t n e r r u c e g a k a e l e s r e v e ri r v m w r , v 0 . 4 = n i p4 , 3 , 2d n g o t 5 0 0 . 00 0 1 . 0a e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 1 = n i p4 , 3 , 2d n g o t 5 . 0 1v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 3 = n i p4 , 3 , 2d n g o t 5 . 2 1v e c n a t s i s e r c i m a n y d 1 r n y d a 6 1 = p p i o t a 4 = p p i0 7 . 0s m h o a 6 1 - = p p i o t a 4 - = p p i0 7 . 0s m h o e c n a t i c a p a c n o i t c n u jc j v r , z h m 1 = f , v 0 = n i p4 , 3 , 2d n g o t 5 3 . 00 5 . 0f p electrical characteristics (t=25 o c) notes 1)transmission line pulse test (tlp) settings: t p = 100ns, t r = 0.2ns, i tlp and v tlp averaging window: t 1 = 70ns to t 2 = 90ns
4 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P typical characteristics non-repetitive peak pulse power vs. pulse time clamping voltage vs. peak pulse current vbus pin (pin 1) clamping voltage vs. peak pulse current d+, d-. id pins (pins 2, 3, 4) non-repetitive peak pulse power vs. pulse time d+, d-. id pins (pins 2, 3, 4) forward voltage vs. peak pulse current vbus pin (pin 1) capacitance vs. reverse voltage d+, d-. id pins (pins 2, 3, 4) vbus pin (pin 1) 0.1 1 10 100 0.1 1 10 100 1000 pulse duration - tp (s) peak pulse power - p pp (kw) t a = 25 o c 0 2 4 6 8 10 12 14 16 18 20 0 20406080100120 peak pulse current - i pp (a) clamping voltage - v c (v) waveform parameters: tr = 8s td = 20s 0 1 2 3 4 5 6 7 8 9 10 00.511.522.533.5 peak pulse current - i pp (a) clamping voltage - v c (v) waveform parameters: tr = 8s td = 20s 0 0.5 1 1.5 2 2.5 3 3.5 0 20406080100120 peak pulse current - i pp (a) forward clamping voltage - v c (v) waveform parameters: tr = 8s td = 20s 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 012345 reverse voltage - v r (v) capacitance - c j (pf) f = 1mhz 1 10 100 1000 0.1 1 10 100 1000 pulse duration - tp (s) peak pulse power - p pp (w) dr040412-40 t a = 25 o c
5 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P typical characteristics esd clamping (+8kv contact per iec 61000-4-2) d+, d-. id pins (pins 2, 3, 4) esd clamping (-8kv contact per iec 61000-4-2) d+, d-. id pins (pins 2, 3, 4) esd clamping (+8kv contact per iec 61000-4-2) vbus pin (pin 1) esd clamping +30kv contact per iec 61000-4-2) vbus pin (pin 1) esd clamping (-8kv contact per iec 61000-4-2) vbus pin (pin 1) esd clamping -30kv contact per iec 61000-4-2) vbus pin (pin 1) 0 5 10 15 20 25 30 35 40 -10 0 10 20 30 40 50 60 70 80 time (ns) clamping voltage (v) measured ? with ? 50 ? ohm ? scope ? input ? impedance, ? 2ghz ? bandwidth. ?? corrected ? for ? 50 ? ohm, ? 20db ? attenuator. ? esd ? gun ? return ? path ? connected ? to ? esd ? ground ? plane -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 -10 0 10 20 30 40 50 60 70 80 time (ns) clamping voltage (v) measured ? with ? 50 ? ohm ? scope ? input ? impedance, ? 2ghz ? bandwidth. ?? corrected ? for ? 50 ? ohm, ? 20db ? attenuator. ? esd ? gun ? return ? path ? connected ? to ? esd ? ground ? plane -10 0 10 20 30 40 50 60 -10 0 10 20 30 40 50 60 70 80 time (ns) clamping voltage (v) measured ? with ? 50 ? ohm ? scope ? input ? impedance, ? 2ghz ? bandwidth. ?? corrected ? for ? 50 ? ohm, ? 20db ? attenuator. ? esd ? gun ? return ? path ? connected ? to ? esd ? ground ? plane -70 -60 -50 -40 -30 -20 -10 0 10 -10 0 10 20 30 40 50 60 70 80 time (ns) clamping voltage (v) measured ? with ? 50 ? ohm ? scope ? input ? impedance, ? 2ghz ? bandwidth. ?? corrected ? for ? 50 ? ohm, ? 20db ? attenuator. ? esd ? gun ? return ? path ? connected ? to ? esd ? ground ? plane -50 0 50 100 150 200 -10 0 10 20 30 40 50 60 70 80 time (ns) clamping voltage (v) measured ? with ? 50 ? ohm ? scope ? input ? impedance, ? 2ghz ? bandwidth. ?? corrected ? for ? 50 ? ohm, ? 40db ? attenuator. ? esd ? gun ? return ? path ? connected ? to ? esd ? ground ? plane ar_2 \ g+8kv -200 -150 -100 -50 0 50 -10 0 10 20 30 40 50 60 70 80 time (ns) voltage (v) measured ? with ? 50 ? ohm ? scope ? input ? impedance, ? 2ghz ? bandwidth. ?? corrected ? for ? 50 ? ohm, ? 40db ? attenuator. ? esd ? gun ? return ? path ? connected ? to ? esd ? ground ? plane ar_2 \ g \ 8kv
6 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P typical characteristics tlp characteristic (positive pulse) d+, d-. id pins (pins 2, 3, 4) tlp characteristic (negative pulse) d+, d-. id pins (pins 2, 3, 4) non-repetitive peak pulse power derating curve typical insertion loss s21 d+, d-. id pins (pins 2, 3, 4) analog crosstakk d+, d-. id pins (pins 2, 3, 4) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp dr040512:25:125:150 0 5 10 15 20 25 0 5 10 15 20 25 30 tlp voltage (v) tlp current (a) transmission line pulse test (tlp) settings: t p = 100ns, t r = 0.2ns, i tlp and v tlp averaging window: t 1 = 70ns to t 2 = 90ns -25 -20 -15 -10 -5 0 -30 -25 -20 -15 -10 -5 0 tlp voltage (v) tlp current (a) transmission line pulse test (tlp) settings: t p = 100ns, t r = 0.2ns, i tlp and v tlp averaging window: t 1 = 70ns to t 2 = 90ns 1 2 3 4 5 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: - .05230 db 800 mhz 2: - .05140 db 900 mhz 3: - .01000 db 1.8 ghz 4: - .09570 db 2.5 ghz 5: - .01300 db 2.7 ghz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz -42 db -48 db start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 20db / ref 0 db 0 db -20 db -40 db -60 db -80 db -100 db -120 db -140 db -160 db
7 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P applications information device connection and layout options for protecting one usb port the RCLAMP1255P is optimized for protection of usb ports. low capacitance protection is provided for the usb data (dm, dp) and usb id pins. the maximum capacitance on these lines is <0.5pf for maximum signal integrity. usb data and id lines are connected at pins 2, 3, and 4. these inputs are referenced to an internal 4 volt tvs protection device. when the voltage on these lines exceed 4 volts, the tvs will conduct. pin 1 is connected to the usb voltage bus (vbus). this device will conduct when the voltage on the bus exceeds 12 volts. ground is provided at pins 5, 6, and the center tabs. multiple micro vias connected to ground are recommended for best esd performance. this will reduce parasitic inductance in the ground path and minimize the clamping voltage seen by the protected device. figure 1 - pin configuration (top view) vbus d+ d- id gnd gnd gnd gnd figure 2 - schematic 23 4 5, 6, 12v 1 tabs 4v
8 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P r e t e m a r a p y l b m e s s an o i t a d n e m m o c e r n g i s e d l i c n e t s r e d l o sd e h s i l o p - o r t c e l e , t u c r e s a l e p a h s e r u t r e p ar a l u g n a t c e r s s e n k c i h t l i c n e t s r e d l o s) " 4 0 0 . 0 ( m m 0 0 1 . 0 e p y t e t s a p r e d l o sr e l l a m s r o e r e h p s e z i s 3 e p y t e l i f o r p w o l f e r r e d l o s0 2 0 - d t s - j c e d e j r e p n g i s e d d a p r e d l o s b c pd e n i f e d k s a m r e d l o s - n o n h s i n i f d a p b c pu a i n r o p s o recommended mounting pattern applications information land pattern - slp2018p6 this land pattern is for reference purposes only. consult your manufacturing group to ensure your notes: 2. company's manufacturing guidelines are met. controlling dimensions are in millimeters (angles in degrees). 1. dim x y p1 g c millimeters (1.95) 0.20 0.60 0.80 1.35 dimensions 2.55 z p 0.40 y h k x p/2 p 0.70 1.40 p1/2 p1 k/2 g z (c) k 0.84 h 0.45 stencil opening land pad ( follow drawing ) .45 .84 .25 .70 1.80 2.00 all dimensions are in mm. land pad. stencil opening component
9 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P outline drawing - so-8 marking outline drawing - slp2018p6 b bbb aaa n e1 d dim a1 a2 a 0.25 0.15 0.20 0.08 0.10 6 0.80 bsc millimeters max 0.05 0.65 dimensions min 0.00 nom 0.50 0.03 (0.127) 0.575 controlling dimensions are in millimeters (angles in degrees). notes: 1. 1.80 e 1.70 1.90 bbb c a b e 0.40 bsc l 0.25 0.30 0.35 pin 1 indicator (laser mark) a b c seating plane aaa c d e a2 a1 a e/2 e lxn bxn e1/2 e1 e/2 d1 e1 r0.20 e1/2 0.70 1.40 d1 0.45 0.84 e1 0.55 0.30 0.69 0.94 d/2 2.00 2.10 1.90 yw = date code pin 1 indicator (laser mark) 12p yw
10 ? 2013 semtech corporation www.semtech.com preliminary protection products RCLAMP1255P ordering information railclamp and rclamp are trademarks of semtech corporation. carrier tape specification r e b m u n t r a p r e p y t q l e e r e z i s l e e r t g t . p 5 5 2 1 p m a l c r0 0 0 , 0 1h c n i 3 1 device orientation in tape pin 1 location (towards sprocket holes) 12p yw 12p yw 12p yw contact information semtech corporation protection products division 200 flynn road, camarillo, ca 93012 phone: (805)498-2111 fax (805)498-3804
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